Scanning laser devices based on electron-beam pumped semiconductor lasers: facilities and perspectives of applications

O. V. Bogdankevich; A. A. Davidov; V. M. Katsap; A. V. Sadchykhin; V. V. Tsygankov; V. N. Ulasyuk

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1993),
paper CThQ6

Scanning laser devices based on electron-beam pumped semiconductor lasers: facilities and perspectives of applications

O. V. Bogdankevich, A. A. Davidov, V. M. Katsap, A. V. Sadchykhin, V. V. Tsygankov, and V. N. Ulasyuk

Conference on Lasers and Electro-Optics 1993

Baltimore, Maryland United States
2–7 May 1993
ISBN: 1-55752-189-1

From the session
Visible Semiconductor Lasers (CThQ)

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O. V. Bogdankevich, A. A. Davidov, V. M. Katsap, A. V. Sadchykhin, V. V. Tsygankov, and V. N. Ulasyuk, "Scanning laser devices based on electron-beam pumped semiconductor lasers: facilities and perspectives of applications," in Conference on Lasers and Electro-Optics, A. Glass, T. Hsu, T. Deutsch, and J. Goldman, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1993), paper CThQ6.

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Abstract

Results of the development of laser scanning devices based on semiconductor electron- beam tubes are reported. The aim is apparatus with high-consumer qualities in tuning, reliability, brightness and resolution. We are using new advanced methods of growing and processing active laser crystals, developing highly effective closed cooling systems, dry high-voltage rectifiers and digital electronic controlling circuits. Average light power 3-5 W and spectral range 650-480 nm have been obtained. Resulting power up to 2000 TV lines is realized. Plug power is ~1 kW per each color (including cooling systems).

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