Abstract
Optoelectronic devices employing vertical-cavity Fabry-Perot semiconductor structures are of interest for applications requiring reflection or transmission modulators, SEEDs, surface emitting lasers, etc. Most previous work in this field has been at wavelengths near 870 nm, where lattice-matched (AlGa)As materials can be used. There are several compelling reasons to extend the operation of these devices to wavelengths in the 1–1.3 µm range. Potentially important applications include the use of Nd.:YAG laser sources at 1.06 µm and 1.32 µm, the utilization of the minimum in fiber-optic dispersion near 1.3 µm, and the possibility of optical interconnects at wavelengths beyond the Si bandgap.
© 1993 Optical Society of America
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