Abstract

The switching time of a heterojunction double-barrier resonant-tunneling diode (RTD) has been measured using electrooptic sampling techniques. Quantum-mechanical tunneling in these single quantum wells is the fastest known charge-transport mechanism in semiconductors. This class of device exhibits such features as negative differential resistance (NDR), an extremely fast current response,¹ and a high-frequency output when applied as an oscillator,² Now, using a laser-based sampling system having a demonstrated subpico-second temporal response,³ a switching time of <2 ps has been measured for a double-barrier RTD. This indicates the potential utility of these devices as high-speed logic devices.⁴

© 1988 Optical Society of America