Abstract
It has been established that noninjecting thin (<1000-Å) p+ contacts can be produced on very high-purity germanium (HPGe) for use in nuclear radiation detectors by either an evaporated metal Schottky barrier or by B implantation. However, the noninjecting n+ contacts formed on HPGe all have shortcomings related to their method of formation: Low-temperature (~300°C) Li diffusion produces a layer that is quite thick (normally a fraction of a millimeter), which precludes its use, in many cases, as either an entrance or an exit window for nuclear radiation.
© 1984 Optical Society of America
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