Abstract
The material alterations initiated by pulsed laser processing of a variety of ion implanted materials have been investigated by the combined techniques of ion scattering/channeling, x-ray scattering, TEM, and surface analysis. It will be shown that pulsed laser annealing of silicon single crystals implanted with group 111 and V dopants resulted in near surface melting, dopant redistribution by liquid diffusion, and dopant trapping into substitutional lattice sites during the very rapid liquid-phase epitaxial recrystallization.
© 1981 Optical Society of America
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