Abstract
Recent results on the optimization of AlGaAs of very narrow (3-4-μm wide) shallow proton-implanted AlGaAs laser diodes are described. The devices for audio/video disk emit near 780 nm, those for optical communication and optical recording near 840 nm. Parameters of importance in the optimization are depth of implantation, p-type cladding doping level, and active layer thickness. All diodes have coated mirrors. Good mode stability and very high kink powers (50-100 MW) are obtained. The diodes are insensitive to optical feedback and, when used in optical communication systems, show very little modal noise.
© 1981 Optical Society of America
PDF ArticleMore Like This
Hisao Kumabe, Shigeyuki Nita, Yoshito Seiwa, Toshio Tanaka, Toshio Sogo, Shigeki Horiuchi, and Saburo Takamiya
FA4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1981
M. Dixon and B. A. Dean
MJ7 Optical Fiber Communication Conference (OFC) 1981
Takahiro Kubo, Kazuo Hirasawa, Mit-Sushige Kondo, Kenjiro Kime, and Ryoichi Ohnishi
THG3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1981