Abstract
III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).
© 2013 Optical Society of America
PDF ArticleMore Like This
David G. Cooke, Erin C. Young, Tom Tiedje, and Frank A. Hegmann
ME2 Optical Terahertz Science and Technology (OTST) 2007
Scott D. Sifferman, Marcin Motyka, Andrew F. Briggs, Kenneth J. Underwood, Kyle M. McNicholas, Robert Kudrawiec, Juliet T. Gopinath, and Seth R. Bank
STh4I.3 CLEO: Science and Innovations (CLEO:S&I) 2018
Vaishno D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank
CF1I.2 CLEO: Science and Innovations (CLEO:S&I) 2013